SystemX Affiliates: login to view related content.
*To receive email announcements and live stream information for upcoming seminars, please subscribe to the SystemX Seminar/EE310 Mailing list here.
The energy and delay consumed by memory-to-logic-chip data movement and access to off-chip memory DRAM have become the bottleneck (known as “memory wall”) for modern computing systems. This seminar will present gain cell memory, as a solution by providing large-capacity high-bandwidth on-chip memory. Oxide Semiconductor transistor (OSFET) with ultra-low leakage current is employed for long retention time to reduce standby power. OSFET-based gain cell memory can achieve >3X density of SRAM with comparable speed. Gain cell memory offers an attractive trade space of data transiency, latency, capacity, and bandwidth. I will also identify the challenges for gain cell memory to be adopted in industry.
Shuhan Liu is a PhD candidate at Stanford University, advised by Prof. H.-S. Philip Wong. Her research interest focuses on the gain cell memory device/circuit/system co-design. She received the B.S. degree in Microelectronics from Peking University in 2020.
